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| Up to 4 GHz Linear Power Silicon Bipolar Transistor Technical Data AT-64020 Features * High Output Power: 27.5 dBm Typical P1 dB at 2.0 GHz 26.5 dBm Typical P1 dB at 4.0 GHz * High Gain at 1 dB Compression: 10.0 dB Typical G1 dB at 2.0 GHz 6.5 dB Typical G1 dB at 4.0 GHz * 35% Total Efficiency * Emitter Ballast Resistors * Hermetic, Metal/Beryllia Package Description The AT-64020 is a high performance NPN silicon bipolar transistor housed in a hermetic BeO disk package for good thermal characteristics. This device is designed for use in medium power, wide band amplifier and oscillator applications operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metallization in the fabrication of these devices. The use of ion-implanted ballast resistors ensures uniform current distribution through the multiple emitter fingers. 200 mil BeO Package 4-179 5965-8915E AT-64020 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA W C C Absolute Maximum[1] 2 40 20 200 3 200 -65 to 200 Thermal Resistance [2,4]: jc = 40C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 25 mW/C for TC > 80C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB T hFE ICBO IEBO Parameters and Test Conditions[1] Insertion Power Gain; VCE = 16 V, IC = 110 mA Power Output @ 1 dB Gain Compression VCE = 16 V, IC = 110 mA 1 dB Compressed Gain; VCE = 16 V, IC = 110 mA Total Efficiency at 1 dB Compression: VCE = 16 V, IC = 110 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 110 mA Collector Cutoff Current; VCB = 16 V Emitter Cutoff Current; VEB = 1 V f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dBm dB % -- A A 20 26.5 8.5 Min. Typ. Max. 7.0 2.0 27.5 26.5 10.0 6.5 35.0 50 200 100 5.0 Note: 1. T = (RF Output Power)/(RF Input Power + VCE I C). 4-180 AT-64020 Typical Performance, TA = 25C 30 15 30 POUT 29 25 POWER OUT (dBm) 12 P1 dB (dBm) 20 T 40 30 20 10 0 0 5 10 15 20 25 POWER IN (dBm) G1 dB (dB) 28 9 15 10 5 0 27 150 mA 110 mA 70 mA 26 6 150 mA 110 mA 70 mA 25 1.0 2.0 3.0 4.0 3 1.0 2.0 3.0 4.0 FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Power Output @ 1 dB Gain Compression vs. Frequency and Collector Current. VCE = 16 V. Figure 2. 1 dB Compressed Gain vs. Frequency and Collector Current. VCE= 16 V. Figure 3. Output Power and Efficiency vs. Input Power. VCE = 16 V, IC = 110mA, f = 4.0 GHz. 35 30 25 MSG GAIN (dB) 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 5.0 FREQUENCY (GHz) |S21E|2 MAG MSG Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 16 V, IC = 110 mA. Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 16 V, IC = 110 mA Freq. GHz 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Mag. .61 .75 .75 .74 .74 .73 .73 .74 .73 .72 .71 S11 Ang. -116 -173 171 159 148 141 130 119 107 93 79 dB 30.0 18.4 12.5 9.2 7.0 5.2 3.8 2.7 1.8 0.9 0.1 S21 Mag. 31.51 8.27 4.23 2.90 2.23 1.82 1.56 1.37 1.23 1.11 1.01 Ang. 130 86 66 50 35 26 12 -2 -16 -30 -43 dB -33.1 -28.8 -27.4 -23.5 -21.6 -19.8 -17.5 -16.1 -14.7 -13.3 -11.8 S12 Mag. .022 .036 .043 .067 .083 .103 .133 .157 .186 .217 .256 S22 Ang. 57 41 49 48 46 47 41 35 26 18 8 Mag. .67 .23 .20 .21 .25 .27 .32 .35 .38 .41 .42 Ang. -48 -88 -100 -110 -120 -127 -135 -146 -158 -168 179 A model for this device is available in the DEVICE MODELS section. 4-181 EFFICIENCY (%) 200 mil BeO Package Dimensions 4 .300 .025 7.62 .64 45 1 BASE NO REFERENCE EMITTER .060 1.52 .048 .010 1.21 .25 2 3 COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 3. Base of package is electrically isolated. .004 .002 .10 .05 EMITTER .030 .76 .128 3.25 .205 5.21 .023 .57 4-182 |
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